Транзистор STP5NK80ZFP N-канал
N-channel 800V - 1.9Ω - 4.3A - TO-220FP
Zener-protected SuperMESH™ Power MOSFET
VDS Drain-source voltage (VGS = 0) 800 V
VGS Gate-source voltage ± 30 V
ID Drain current (continuous) at TC = 25°C 4.3 A
ID Drain current (continuous) at TC=100°C 2.7 A
IDM(2) Drain current (pulsed) 17.2 A
PTOT Total dissipation at TC = 25°C 110 30 W
VESD(G-S) Gate source ESD (HBM-C=100pF, R=1.5ΚΩ) 3500 V
dv/dt (3) Peak diode recovery voltage slope 4.5 V/ns
VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1s; Tc= 25°C) - 2500 V
Operating junction temperature Storage temperature -55 to 150 °C