Транзистор IRLB3034 N-канал
N-channel HEXFETPower MOSFET
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 343A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 243 A
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) 195 A
IDM Pulsed Drain Current 1372 A
PD @TC = 25°C Maximum Power Dissipation 375 W
Linear Derating Factor W/°C
VGS Gate-to-Source Voltage 20 V
dv/dt Peak Diode Recovery 4.6 V/ns
TJ Operating Junction and Storage Temperature Range -55 to + 175 °C
Soldering Temperature, for 10 seconds (1.6mm from case) 300 °C