Транзистор HUF76639P3 N-канал
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 51A (Tc)
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 86nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 2400pF @ 25V
FET Feature -
Rds On (Max) @ Id, Vgs 26 mOhm @ 51A, 10V
Mounting Type Through Hole
Supplier Device Package TO-220AB