Транзистор IRF1010E N-канал
HEXFET® Power MOSFET
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25° C 84A
Operating Temperature 175°C
Power - Max 200W
Vgs(th) (Max) @ Id 4V @ 250µA
Rds On (Max) @ Id, Vgs 11 mOhm @ 43A, 10V
FET Feature Standard
FET Type MOSFET N-Channel, Metal Oxide
Серия HEXFET®
Lead Free Status / RoHS Status Contains lead / RoHS non-compliant
Gate Charge (Qg) @ Vgs 120nC @ 10V
Input Capacitance (Ciss) @ Vds 3210pF @ 25V
Тип монтажа Выводной
Корпус (размер) TO-220