Транзистор IRFP460 N-канал
Power MOSFET
VDS (V) 500
RDS(on) (Ω) VGS = 10 V 0.27
Qg (Max.) (nC) 210
Qgs (nC) 29
Qgd (nC) 110
Configuration Single
Drain-Source Voltage VDS 500 V
Gate-Source Voltage VGS ± 20 V
Continuous Drain Current VGS at 10 V TC = 25 °C 20 A
TC = 100 °C 13 A
Pulsed Drain Currenta IDM 80 A
Linear Derating Factor 2.2 W/°C
Single Pulse Avalanche Energyb EAS 960 mJ
Repetitive Avalanche Currenta IAR 20 A
Repetitive Avalanche Energya EAR 28 mJ
Maximum Power Dissipation TC = 25 °C PD 280 W
Peak Diode Recovery dV/dtc dV/dt 3.5 V/ns
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 °C
Soldering Recommendations (Peak Temperature) for 10 s 300 °C
Тип монтажа Выводной
Корпус (размер) TO-247-3