Транзистор 2N7000 N-канал
FET Type MOSFET N-Channel, Metal Oxide
FET Feature Logic Level Gate
Rds On (Max) @ Id, Vgs 5 Ohm @ 500mA, 10V
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25° C 200mA
Vgs(th) (Max) @ Id 3V @ 1mA
Input Capacitance (Ciss) @ Vds 50pF @ 25V
Power - Max 400mW
Тип монтажа Выводной
Корпус (размер) TO-226-3, TO-92-3 (TO-226AA)
Корпус TO-92-3
Серия STripFET™
Gate Charge (Qg) @ Vgs 2nC @ 5V